? 2008 ixys corporation, all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 300 a v ge = 0v t j = 125 c 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 60a, v ge = 15v, note 1 1.50 1.80 v i c = 120a 1.75 symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c (limited by leads) 75 a i c110 t c = 110 c72a i cm t c = 25 c, 1ms 450 a ssoa v ge = 15v, t vj = 125 c, r g = 3 i cm = 240 a (rbsoa) clamped inductive load @ v ce 600v p c t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (to-264) 1.13 / 10 nm/lb.in. f c mounting force (plus247) 20..120 / 4.5..27 n/lb. t l maximum lead temperature for soldering 300 c t sold 1.6mm (0.062 in.) from case for 10s 260 c weight to-264 10 g plus247 6 g ds99869a(06/08) v ces = 600v i c110 = 72a v ce(sat) 1.8v t fi(typ) = 92ns ixgk72n60b3h1 IXGX72N60B3H1 genx3 tm 600v igbt with diode medium speed low vsat pt igbts 5-40 khz switching preliminary technical information features z optimized for low conduction and switching losses z square rbsoa z anti-parallel ultra fast diode z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts g = gate c = collector e = emitter tab = collector to-264 (ixgk) plus247 (ixgx) (tab) g c e tab g d s e g c
ixys reserves the right to change limits, test conditions, and dimensions. ixgk72n60b3h1 IXGX72N60B3H1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 45 76 s c ies 6800 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 575 pf c res 80 pf q g 225 nc q ge i c = 60a, v ge = 15v, v ce = 0.5 ? v ces 40 nc q gc 82 nc t d(on) 31 ns t ri 33 ns e on 1.4 mj t d(off) 152 240 ns t fi 92 150 ns e off 1.0 2.0 mj t d(on) 29 ns t ri 34 ns e on 2.7 mj t d(off) 228 ns t fi 142 ns e off 2.2 mj r thjc 0.23 c/w r thcs 0.15 c/w inductive load, t j = 25 c i c = 50a, v ge = 15v v ce = 480v, r g = 3 inductive load, t j = 125 c i c = 50a,v ge = 15v v ce = 480v,r g = 3 reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 60a, v ge = 0v, note 1 1.6 2.0 v t j = 150 c 1.4 1.8 v i rm 8.3 a t rr 140 ns r thjc 0.3 c /w note 1: pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus247 tm (ixgx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 to-264 (ixgk) outline dim inches millimeters min max min max a 0.185 0.209 4.70 5.31 a1 0.102 0.118 2.59 3.00 b 0.037 0.055 0.94 1.40 b1 0.087 0.102 2.21 2.59 b2 0.110 0.126 2.79 3.20 c 0.017 0.029 0.43 0.74 d 1.007 1.047 25.58 26.59 e 0.760 0.799 19.30 20.29 e .215 bsc 5.46 bsc j 0.000 0.010 0.00 0.25 k 0.000 0.010 0.00 0.25 l 0.779 0.842 19.79 21.39 l1 0.087 0.102 2.21 2.59 ?p 0.122 0.138 3.10 3.51 q 0.240 0.256 6.10 6.50 q1 0.330 0.346 8.38 8.79 ?r 0.155 0.187 3.94 4.75 ?r1 0.085 0.093 2.16 2.36 s 0.243 0.253 6.17 6.43 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 60a, v ge = 0v, t j = 100 c -di f /dt = 200a/ s , v r = 300v
? 2008 ixys corporation, all rights reserved ixgk72n60b3h1 IXGX72N60B3H1 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 330 012345678 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 30a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 120a 60a 30a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgk72n60b3h1 IXGX72N60B3H1 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 240 q g - nanocoulombs v ge - volts v ce = 300v i c = 60a i g = 10ma fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 3 ? dv / dt < 10v / ns fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2008 ixys corporation, all rights reserved ixgk72n60b3h1 IXGX72N60B3H1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 50a i c =100a i c = 25a fig. 15. inductive turn-off switching times vs. gate resistance 80 100 120 140 160 180 200 220 240 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 100 250 400 550 700 850 1000 1150 1300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 50a i c = 25a i c = 100a i c = 25a, 50a, 100a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 e on - millijoules e off e on - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 50a i c = 100a i c = 25a fig. 16. inductive turn-off switching times vs. collector current 70 90 110 130 150 170 190 210 230 20 30 40 50 60 70 80 90 100 i c - amperes t f - nanoseconds 130 145 160 175 190 205 220 235 250 t d(off) - nanoseconds t f t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 60 80 100 120 140 160 180 200 220 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 140 155 170 185 200 215 230 245 260 t d(off) - nanoseconds t r t d(off) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 25a, 50a, 100a
ixys reserves the right to change limits, test conditions, and dimensions. ixgk72n60b3h1 IXGX72N60B3H1 ixys ref: g_72n60b3(76)06-26-08-c fig. 18. inductive turn-on switching times vs. gate resistance 10 30 50 70 90 110 130 150 170 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 20 35 50 65 80 95 110 125 140 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 100a i c = 25a i c = 50a fig. 19. inductive turn-on switching times vs. collector current 10 20 30 40 50 60 70 80 90 20 30 40 50 60 70 80 90 100 i c - amperes t r - nanoseconds 26 27 28 29 30 31 32 33 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 3 ? , v ge = 15v v ce = 480v 25oc < t j < 125oc t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 70 80 90 100 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 25 26 27 28 29 30 31 32 33 34 35 t d(on) - nanoseconds t r t d(on ) - - - - r g = 3 ? , v ge = 15v v ce = 480v i c = 25a i c = 50a i c = 100a
? 2008 ixys corporation, all rights reserved ixgk72n60b3h1 IXGX72N60B3H1 fig. 26 maximum transient thermal impedance junction to case (for diode) 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width [ms] z(th)jc - [ oc / w ] fig. 21 fig. 22 fig. 24 fig. 25 fig. 23 [ s ] ixys ref: g_72n60b3(76)06-26-08-c
|
